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University of Colorado Denver | Anschutz Medical Campus

University of Colorado Denver
 

Publications

Hamid Fardi, Ph.D


H. Fardi and F. Buny*, Characterization and Modeling of CdS/CdTe Heterojunction Thin‐Film
Solar Cell for High Efficiency Performance, International Journal of Photoenergy Volume 2013 Article ID
576952, 6 pages, http://dx.doi.org/10.1155/2013/576952, 2013.

H. Fardi, Modeling Hot Carriers Quantum Well Solar Cells, Journal of Physics and Application, Vol. 1, No.
1, pp. 1‐9, ISSN: 2335‐6901, 2013.

Fardi, H., “Design and Simulation of Multi Quantum‐Well AlGaAs/GaAs Single Junction Solar Cell with
Back Surface Reflector,” Journal of Renewable Energy, Article ID 859519, 5 pages, doi:
10.5402/2012/859519, 2012.

H. Fardi, M. Jan*, and Bart Van Zeghbroeck, Design and Simulation of Multi‐Quantum‐Well GaAsl AIGaAs
Single Junction p‐i‐n with Back Surface DBR Reflector, 38th IEEE Photovoltaic Specialists Conference
(PVSC) pp. 785 – 788, 2012.

X. Niu* and H. Fardi, “Effects of base doping and carrier lifetime on differential current gain and
temperature coefficient of 4H‐SiC power bipolar junction transistors” Journal of Electronics, 99(4), pp.
531‐542, January 2012.

Fardi, H., Simulation of hot electron quantum well photovoltaic devices,” SPIE Physics and Simulation of
Optoelectronics Device , vol. 7933, pp.793325‐1 793325‐8, 2011.

Fardi, H., “Simulation of Hot Electron Quantum Well Photovoltaic Devices”, SPIE Physics and
Simulation of Optoelectronics Devices, vol.7598, 2011.

X. Niu* and H. Fardi, “Effects of base doping and carrier lifetime on differential current gain and
temperature coefficient of 4H‐SiC power bipolar junction transistors” Journal of Electronics,
DOI:10.1080/ 00207217.2011.629226, pp. 1‐12, Dec. 15 2011.

Fardi, H., “Numerical Modeling of Hot Electron GaAs/AlxGa1‐xAs Quantum Well Photovoltaic” 35th IEEE
Photovoltaic Specialists Conference (PVSC), ISBN: 978‐1‐4244‐5892‐9, pp. 1800‐1803, 2010.

Fardi, H., Alaghband, G., “Analog behavioral modeling of magnetoresistive sensors”, 53rd IEEE
2010International Midwest Symposium on Circuits and Systems (MWSCAS), ISBN: 9781424477715 (vol.
2), pp.408‐411, 2010.

F.C. S. Da Silva B.P. Gorman, M. J. Kaufman, , H. Fardi, D.S. Wisbey, J.S. Kline, D. Braje, and D.P. Pappas, “
Epitaxial Growth of (111) Al/Al2O3 Trilayers on Sapphire,” American Physical Society, vol. 55, no. 2, March
15‐19, 2010.

Fardi, H. and B. Van Zeghbroeck, “Modeling and Simulation of AlGaAs/GaAs QW‐DBR Junction
Photovoltaic Devices,” of SPIE: Physics and Simulation of Optoelectronics Devices, vol. 7597, pp. 759723
pp. 1‐ 9, 2010.

L. Yuan, S.T. Halloran*, D. Wisbey, D. Pappas, F. da Silva, and Fardi, H., " Scissoring in Narrow Submicron
Permalloy Stripes Induced by Oersted Field,” Journal of Applied Physics, 106, 113919, December 10
2009.

Fardi, H., “Modeling and characterization of 4H‐SiC bipolar transistors, Transaction on Electronics and
Signal, vol. 1, pp. 1‐7, December 2008.

Fardi, H., “modeling the dc gain performance of 4H‐SiC BJTs”, Journal of Computation and mathematics
in Electrical and Electronic Engineering, vol. 26, no.6, pp. 1236‐1246, 2007.

S.T. Halloran*, H. Fardi, F.C.S. Da Silva, D. Pappas, “Permanent‐Magnet‐Free Stabilization and Sensitivity
Tailoring of Magnetoresistive Field Sensors,” Journal of Applied Physics, vol. 102, 033904, pp. 1‐3, 2007.

S.T. Halloran*, H. Fardi, F.C.S. da Silva, D. Pappas, E. Hill, “Modulated Antiferromagnetic Bias with
Tunable Sensitivity”, Materials Research Society (MRS) International Conference, San Francisco, CA, April
9‐13, 2007.

L. Yuan, F. C. S. da Silva, S. T. Halloran*, H. Fardi, and D. Pappas, “Oersted Field Induced Magnetization
Scissoring I Single Layer Permalloy Bar,” 52nd Institute of Electrical and Electronic Engineers (IEEE)
International Magnetics Conference (INTERMAG), November 5‐9, Tampa, Florida, 2007.

Alaghband, G., Gnabasik*, D., Fardi, H., “Scientific Assistant Virtual Laboratory (SAVL),” MA07, American
Physical Society, March 5‐9, Denver, Colorado, 2007.

Fardi, H., Alaghband, G., “Modeling Hot Electron in single Quantum Well P‐i‐N Photodiodes, IEEE/LEOS
Summer Topical Meetings, pp. 44‐45, Quebec City, Canada, July 17 – 19, 2006.

S.T. Halloran*, H. Fardi, F.C.S. Da Silva, D. Pappas, E. Hill, “Low Noise, High Sensitivity Anisotropic
Magnetoresistive Sensors with. Second Harmonic Readout” American Vacuum Society, 53rd
International Symposium, San Francisco, CA , November 2006.

H. Fardi, “Modeling the DC gain of 4H‐SiC bipolar transistors as a function of surface recombination
velocity,” Solid State Electronics, vol. 49, no. 4, pp. 663‐666, April 2005.

H. Fardi, “Detailed formulation of energy balance equations in single quantum
well devices,” Journal of Computation and mathematics in Electrical and Electronic Engineering, vol. 21,
no.3, pp. 425‐437, 2002.

H. Fardi and G. Alaghband, “Simulation of hot electron effect in negative‐electron‐affinity GaN pn
junction diodes,” SPIE Physics and Simulation of Optoelectronics Devices, vol. 4646, pp. 574‐582, San
Jose, CA, January 2002.

H. Fardi, “Modeling of pnpn GaN and 6H‐SiC Thyristors,” SPIE Physics and Simulation of Optoelectronics
Devices, vol. 3944, pp. 110‐118, San Jose, CA, January 2000.

H. Fardi, D. W. Winston, R. E. Hayes, and M. C. Hanna, “ Numerical modeling of energy balance
equations in Quantum Well AlGaAs/GaAs p‐i‐n Photodiodes,” IEEE Transactions on Electron Devices, vol.
47, no. 5, pp. 915‐921, May 2000.

H. Fardi, D. W. Winston*, R. E. Hayes, and M. C. Hanna, “Numerical simulation of energy balance
equations in AlGaAs/GaAs pin diodes with single quantum wells,” SPIE Physics and Simulation of
Optoelectronics Devices, vol. 3625, pp. 543‐551, San Jose, CA, January 1999.

H. Fardi, “Device Modeling and Analysis of GaN/SiC Heterojunction Bipolar Transistors,” Proceedings of
Sixth International Conference on Simulation of Devices and Technologies, pp. 163‐168, Cape Town, South
Africa, pp. 163‐168, October 1998.

H. Fardi, G. Alaghband, and J. I. Pankove,“ Numerical modeling and characterization of high frequency
high power high temperature GaN/SiC Heterostructure bipolar transistors,” Journal of Electronics, vol.
82, no. 6, pp. 567‐574, 1997.

H. Fardi and E. Sahm*,“ Transfer Function Modeling of a Graphical Circuit,” Proceedings of the 12th IEEE
University Government Industry Microelectronics Symposium, Rochester, New York, July 20‐23, 1997.

H. Fardi and J.I. Pankove," Modeling and characterization of high‐temperature GaN/SiC HBT's,"
SPIE Physics and Simulation of Optoelectronics Devices,vol. 2693, pp. 73‐83, , January 1996.

H. Fardi, “Device Modeling and Characterization of GaN/SiC HBT for High Temperature Operation,"
Proceedings of the 188th Electrochemical Society Meeting, vol. 95‐2, pp. 903‐904, Chicago, IL, 1995.

H. Fardi, "Device Modeling and Characterization of GaN/SiC HBT for High Temperature Operation,"
Proceedings of the conference on Wide BandGap Semiconductors and Devices, vol. 95‐21, pp. 198‐203,
1995.

H. Fardi, "Effects of Electron Trappings on Diffusion Time‐of‐Flight Measurement
in GaAs," Journal of Solid State Electronics , vol. 38. no. 10, pp. 1811‐1816, 1995.

H. Fardi, "Effects of Interface and Bulk Recombination on Switching Characteristics of AlGaAs/GaAs pnpn
Bistable Device," IEEE Transactions on Electron Devices, vol. ED‐42, no. 12, pp. 2248‐2250, December
1995.

H. Fardi, "Numerical Investigation of Carrier Transport in Double Heterostructure AlGaAs / GaAs pnpn
Bistable Device, " Journal of Computation and Mathematics in Electrical and Electronic Engineering, vol.
13, no. 4, pp. 893‐902, 1994.

K.L. Miller*, H. Fardi, and R.E. Hayes, " Effect of Multiple Reflection Propagation on Photon Recycling in
GaAs/AlGaAs Double Heterostructures, " Journal of Applied Physics, vol. 75, no. 12, pp. 8158‐8162, June
1994.

H. Fardi (invited paper), "Modeling of Double Heterostructure AlGaAs/GaAs pnpn Bistable Switch,
“Proceedings of the Numerical Analysis of Semiconductor Devices and Integrated Circuits‐ NASECODE X,
pp. 93‐94, Dublin, Ireland, June 1994.

H. Fardi, “Transient modeling of pnpn AlGaAs/GaAs optoelectronic switches," SPIE Physics and
Simulation of Optoelectronics Devices,vol. 2146 pp.100‐111, 1994.

H. Fardi, "Transient Modeling of Heterostructure Optoelectronic Switches," Proceedings of the IEEE
University Government Industry Microelectronics, pp. 156‐161, Durham, NC, 1993.

H. Fardi, "Analysis of Submicron GaAs MESFETs using Drift‐Diffusion Simulators," Proceedings of the
Numerical Analysis of Semiconductor Devices and Integrated Circuits‐ NASECODE IX, pp. 34‐35, Copper
Mountain, Colorado, 1993.

H. Fardi, “Computer Modeling of pnpn optoelectronic Switch,” ES148‐E International Conference on
Electrical Engineering, 1993.

H. Fardi, "Characterization of submicrometer GaAs MESFET using drift‐diffusion simulator," Journal of
Computation and Mathematics in Electrical and Electronic, vol.12, no. 4, pp. 361‐375, 1993.

H. Fardi, "Simulation and Modeling of PNPN Optical Devices,” IEEE Transaction on CAD of Integrated
Circuits and Systems, vol. 12, no. 5, pp. 666‐671, 1993.

H. Fardi and R. E. Hayes, "Modeling Submicrometer GaAs MESFETs Using PISCES with an Apparent Gate‐
Length Dependent Velocity‐Field Relation," IEEE Transactions on Electron Devices, vol. ED‐39, pp. 1778‐
1780, no. 7, 1992.

H. Fardi, D. Suda*, and R. E. Hayes, "Numerical Modeling of PNPN Optical Switches," Proceedings
of Indium Phosphide and Related Materials, pp. 300‐304, 1990.

I. B. Bhat, H. Fardi, S. K. Ghandhi, and C. J. Johnson, " Highly Uniform, Large Area HgCdTe Layers on CdTe
and CdTeSe Substrates,” Journal Vacuum Science and Technology, A6 (4), pp. 2800‐2804, 1988.

Ghandhi, S. K., Bhat, I. B., and Fardi, H." Organometallic Epitaxy of HgCdTe CdTeSe Substrates, with High
Compositional Uniformity,” Applied Physics Letters, vol. 52, No. 5, pp. 392‐394, 1988.

I. B. Bhat, H. Fardi, S. K. Ghandhi, and C. J. Johnson, " Highly Uniform, Large Area HgCdTe Layers on
CdTeSe Substrates,” Proceedings of the Physics and Chemistry of Mercury Cadmium Telluride, New
Orleans, Louisiana, 1987.

R. K. Ahrenkiel, D. J. Dunlavy, H. C. Hamaker, R. T. Green, C. R. Lewis, R. E. Hayes, and H. Fardi, "Time of
Flight Studies of Minority Carrier Diffusion in AlxGa1‐xAs Homojunction", Applied Physics Letters, vol. 49,
no. 12, pp.725‐727, 1986.

R. E. Hayes and H. Fardi, "The Use of Admittance Spectroscopy to Determine Deep‐Level Characteristics
in Semiconductor Heterojunctions ", Proceedings of Advanced Materials Institute, pp.233‐235, Golden,
Colorado, 1987.

R. K. Ahrenkiel, H. Ahroni, R. E. Hayes, and H. Fardi, " Transient Current Studies of Junction Activity in
Solar Cells, "Proceedings of the 18th IEEE Photovoltaic Specialist Conference(PVSC), pp.738‐743, 1985.

R. E. Hayes and H. Fardi, "Simulation of Measurements of Semiconductor Materials Symposium on
Current Materials Research , Denver, April 1985.

S. Geller, A. K. Ray, H. Fardi, and K. Nag, " New Solid Electrolyte: CsCu2Cl3I2,” Physical Review B, vol. 25,
no. 4, pp. 2968‐2970, 1982.

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